| 摘要 |
PURPOSE:To form an impenetrable finely roughened sharp resist pattern by coating a substrate with a polyfluoroalkyl-alpha-chloroacrylate homo- or co-polymer, irradiating radiation to form a pattern, and heat developing it up to the glass transition point of the polymer. CONSTITUTION:The polyfluoroalkyl-alpha-chloroacrylate homo- or co-polymer to be used here is a homopolymer or comonomer of a monomer represented by the formula shown on the right, R being a 2-10C alkyl group substd. by at least one F atom at the >=2-position. The substrate is coated with such a polymer to form a resist film, and it is patternwise excessively exposed to radiation rays, such as electron beams, X-rays, or far UV rays to form a pattern, and heat developed at a temp. below the glass transition point of the used polymer. |
