| 摘要 |
PURPOSE:To improve the characteristics and the yield of IC's by reducing the amount of side etching and its variation by a method wherein the first plasma etching is performed to the surface of a polycrystalline layer deposited on a semiconductor substrate, thus forming polycrystallne wirings over the whole region of the surface; and unnecessary parts of them are removed by the second plasma etching. CONSTITUTION:The polycrystalline layer is deposited on the surface of the semiconductor substrate 1, and a photo mask having a polycrystalline wiring region A and a dummy wiring region B positioned at the part other than this region is provided on the surface. Next, wiring photo resist patterns 5 and dummy wiring photo resist patterns 6 are formed on the surface of the polycrystalline layer by means of the mask. At this time, the total extension of the patterns 6 are made as long as possible. Thereafter, polycrystalline patterns 5a and 6a of the regions A and B are simultaneously formed by the first plasma etching; the region A is covered with the second photo mask, the second photo resist pattern 7 being provided, and the wirings 6a of the region B being them removed by the second etching. |
