发明名称 PROTECTING CIRCUIT OF TRANSISTOR INVERTER
摘要 PURPOSE:To early prevent the damage of a transistor by turning OFF the transistor before becoming the current and voltage that a hot spot occurs in the transistor. CONSTITUTION:A reactor 15 and a diode 16 are inserted between a DC power source having a rectifier 2 and a capacitor 3 and a transistor bridge 4, and the rate of change of the defective current of the transistor in the bridge 4 is limited. The fact that the voltage at both terminals of transistors 41, 44 exceeds 1/2 of the DC side voltage of the bridge 4 is detected by photocouplers 20, 21. The detected voltage is inputted to an AND circuit 24. The output of the AND circuit 24 is inputted to a defect detector 28, the malfunction of other transistor and the output of an overcurrent detector 14 are detected by the detector 28, and a transistor drive signal is turned OFF by a logic circuit 11.
申请公布号 JPS60125177(A) 申请公布日期 1985.07.04
申请号 JP19830230980 申请日期 1983.12.07
申请人 TOSHIBA KK 发明人 OKATSUCHI CHIHIRO
分类号 H02M7/537;H02M7/5387 主分类号 H02M7/537
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