发明名称 DEVICE FOR VAPOR DEPOSITION OF THIN FILM
摘要 PURPOSE:To contrive the reduction of operational electric power and the improvement in quality of thin films to be formed by arranging a lid above a substance to be deposited which is formed into a column shape to form a vapor generating space and vaporizing the substance to be deposited by heating the surface of that substance by irradiation with a beam. CONSTITUTION:The substance to be deposited 50 present on a table 61 is moved upward by a moving means 60 and a lid 40 and the upper plane 50a form a space 40c and the air in a tank 1 is exhausted to about 10<-6>Torr. A beam 33 from an electron gun 32 irradiates a surface 50a to vaporize the substance 50. During said procedure, the substance is raised 60 so as to keep vaporization. When a vapor pressure in the space 40c becomes 0.1Torr or above, vapor jets out from a nozzle 40a and cluster ions 16 are accelerated by an electric field between electrodes 14 and cathode electrodes 10 and are vapor-deposited on a substrate 18. Meanwhile neutral clusters 15 are also vapor-deposited on the substrate 18 by the kinetic energy of jetting. By this constitution, a heat efficiency of vaporization is extremely high and an operational electric power can be reduced. Inclusion of materials of a crucible into the vapor-deposition film can be prevented and the high-quality thin film is obtained.
申请公布号 JPS60124922(A) 申请公布日期 1985.07.04
申请号 JP19830235572 申请日期 1983.12.12
申请人 MITSUBISHI DENKI KK 发明人 YAMANISHI KENICHIROU;SHIYUHARA AKIRA;MINOWA YOSHIFUMI;KOU SANJIYU;INA TERUO
分类号 C23C14/22;H01L21/203 主分类号 C23C14/22
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