DEVICE FOR VAPOR DEPOSITION OF THIN FILM

摘要

PURPOSE:To control the angle of crystal axis of a thin film to be produced with high accuracy by providing deflecting means on accelerating electrodes which impart angles to cluster ions when the ions are bombarded against a surface of a substrate in a cluster ion beam vapor deposition device wherein a crucible containing a substance to be deposited is arranged and a vapor of said substance is jetted out from a nozzle arranged on the top of the crucible and is made into the cluster ions by ionizing means and the accelerating electrodes. CONSTITUTION:A crucible 4 having a nozzle 4a on its top is arranged in a vacuum container 1 having an exhaust path 2 at the bottom through insulating support members 19 and 20 and this crucible contains cobalt 35. Filaments 6 for bombardment are wound around a periphery of the crucible 4 and these are surrounded with a heat shielding plate 7. Next, ionizing means 12 and accelerating electrodes 14 are arranged above the nozzle 4a and the substance to be deposited is changed into cluster ions 15 and excited cluster ions 16 which are then bombarded against a substrate 18 placed oppositely to each other. At this time, deflecting means 30 are arranged on the electrodes 14 to control the incident angle of the ions 15 and 16.