A semiconductor member and semiconductor device employing such a member.

摘要

A semiconductor member has a structure wherein a first semiconductor layer (31) is located between second and third semiconductor layers (32, 33) which have forbidden band widths greater than a forbidden band width of the first semiconductor layer (31). The second semiconductor layer (33) is between the first semiconductor layer (71) and a substrate and is doped with impurities. The semiconductor member constructs a depletion type device with the first and second semiconductor layers (31, 33), and an enhancement type device with the first and third semiconductor layers (31, 32). A semiconductor device can be formed as an enhancement or depletion type by selectively connecting the semiconductor layers (31, 32, 33).