| 摘要 |
PURPOSE:To improve the moisture resisting property by a method wherein, after bonding process, the exposed surface of an external lead electrode is oxidized in oxygen plasma. CONSTITUTION:A lead frame 7 is connected to a bonding pad 4 formed on a semiconductor device by a bonding wire 9 and then the exposed surface of the bonding pad 4 is oxidized in oxygen plasma to change it into alumina. A metal surface may be oxidized in oxygen plasma at lower temperature than that of any other processes preventing bonding strength from deteriorating due to purple plague etc. Therefore the bonding pad 4 may be provided with high bonding strength while changing its exposed surface into oxide film 10. Through these procedures, the etching rate of the oxide film 10 utilizing water content externally permeated may be extremely retarded comparing with that of the metal part of the bonding pad 4 by means of changing the exposed surface of the bonding pads into the oxide film 10. |
