发明名称 DRY ETCHING DEVICE
摘要 PURPOSE:To enable to make narrower the movable extent necessary for the field generating means by a method wherein the field generaing means are respectively provided in a rotatable state in such a way that the pole directions thereof become parallel to each other to the face of the substrate electrode, which is a cathode. CONSTITUTION:An opposed electrode 20, which is an anode, and a substrate electrode 40, whereon a substrate 30 is placed and which is a cathode, are internalized in a vacuum treating chamber 10 in parallel opposite to each other to the vertical direction. Field generating means 50 are permanent magnets 51, whose configurations are respectively discal, and are provided by placing on holders 52 provided on each one end of cylinders 60 in such a way that the pole directions thereof become parallel to each other to the face of the substrate electrode 40. The substrate 30 is carried in the vacuum treating chamber 10 and after the substrate 30 was placed on the upper surface of an electrode plate 42 put on the substrate electrode 40, gas is fed into the gas passageway of an electrode axis 21 from a gas feeding unit and the gas is released towards the substrate 30 from gas releasing holes. The pressure is properly adjusted to the etching pressure, the permanent magnets 51 are rotatingly driven by a motor 63, and when a power is turned-ON into a high frequency generating unit 71, a high-density plasma is generated in between the opposed electrode 20 and the substrate electrode 40 and the substrate 30 is etched by this plasma.
申请公布号 JPS60123034(A) 申请公布日期 1985.07.01
申请号 JP19830229903 申请日期 1983.12.07
申请人 HITACHI SEISAKUSHO KK 发明人 NAKAZATO NORIO;NAWATA MAKOTO;FUKUYAMA RIYOUJI;KAKEHI YUTAKA;ICHIHASHI KAZUAKI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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