| 摘要 |
PURPOSE:To enable to reduce influences of the interfacial level and fixed charge between a single crystal silicon film, which functions as an active layer, and a single crystal insulating film, which is a sublayer located under the single crystal silicon film, and to contrive to improve the characteristics of the titled element by a method wherein a silicon oxide film is made to interpose between the single crystal insulating film and the single crystal silicon film. CONSTITUTION:A single crystal spinel film 2 is grown on a single crystal silicon film 1 for electrode as an interlayer insulating film, and following that, a single crystal silicon film 3 is grown. O<+> type ions, for example, are implanted into the interface between the silicon film 3 and the spinel film 2 through the single crystal silicon film 3, and moreover, a thermal treatment is performed, the surface layer of the silicon film 3 is left and a silicon oxide film 8 is formed. Furthermore, a single crystal silicon film 3' is grown on the silicon film 3 and an active layer, wherein a device on the upper layer is incorporated, is constituted of both silicon films 3 and 3'. A source region 4 and a drain region 5 are formed in the silicon films 3' and 3, and at the same time, a single crystal spinel film 6 is formed as a gate oxide film. Moreover, after contact holes were formed in the spinel film 6, impurities are implanted in a high concentration and single crystal silicon films 7 for electrodes are formed. |
