| 摘要 |
PURPOSE:To form a single crystal semiconductor layer of favorable quality on an insulating layer, and to contrive to enhance the characteristic of an element, etc. at manufacture of a semiconductor device by method wherein melting of a semiconductor film to be resulted from the difference of thermal conductivities between the insulating layer and the semiconductor film formed thereon, and the discrepancy of the recrystallzing conditions are reduced to facilitate conversion of the whole of the semiconductor film into a single crystal. CONSTITUTION:An opening 23 is formed at a part of an SiO2 film 22 on a substrate 21. Then, a polycrystalline silicon film 24 is deposited thereon, and an SiO2 film (thin film) 25 is adhered only on the opening 23. An electron beam formed in a linear type is scanned as to cross at right angles with the edge of the opening 23, and the silicon film 24 is converted into (100) single crystal silicon according to epitaxial growth at the opening 23 at first. Then epitaxial growth is proceeded in the lateral direction following to scanning of the electron beam to convert wholly the silicon film into a single crystal. After the SiO2 film 25 is removed, an element isolatingly insulating film 27 is formed, a gate electrode 32 consisting of polycrystalline silicon, for example, is formed on the silicon film 24 converted into the single crystal interposing a gate oxide film 31 between them, and source, drain regions 33, 34 are formed to produce an MOS transistor. |
