| 摘要 |
PURPOSE:To facilitate the detection of an etching end point, to dispense with the skillfulness of operation and to contrive the improvement of the operating efficiency and the improvement of the yield by a reduction in misoperation by a method wherein impurity ions are implanted in advance in a film to be etched to the prescribed depth of the film to be etched. CONSTITUTION:A resist film 4 is applied on a PSG film 3 and after the surface thereof is flattened, argon (Ar) ions 3 are implanted in the PSG film 3 at a constant accelerating voltage. The semiconductor device is housed in the plasma etching device and when an etching is performed using mixed gas of CF4 gas and O2 gas in a a mixture ratio of 7:3, the spectle peculiar to the Ar is detected on an emission analyzer 17 during the etching treatment. At that point, the etching treatment is stopped. So that the desired film thickness only of the PSG film 3 is etched and the PSG film 3 with the flat surface can be obtained. |
