| 摘要 |
PURPOSE:To prevent the generation of a malfunction even to a small amount of noises by constituting a writing amplifier with the 1st inverter to which an input signal is impressed and the 2nd inverter which uses the output of the 1st inverter as an input and connecting a transistor which is turned on in a chip non-selection mode between the output terminal of each inverter and a power supply terminal. CONSTITUTION:In a chip non-selection mode C'E', an r/w is set at a level VDD and FETQ38 and Q42 set at the drive side of each inverter of a level conversion circuit 14 are turned on to prescribe forcibly the output of each inverter at a level GND. Both outputs din and din' of a writing amplifier are set at a level VDD respectively. Then a chip selection signal CE is set at a level VDD, and the level of the r/w signal is set at GND when a write signal is impressed. Thus FETQ38 and Q42 are turned off, and the output din is set at VDD with the other output din' set at GND respectively. Then a writing action is carried out to a memory cell. While the signal r/w is set at VDD in a read mode of a memory circuit, i.e., when a read signal r'/w' is set at GND. The output state has no change and both outputs din and din' are set at VDD. |
