| 摘要 |
PURPOSE:To reduce the interval between an emitter and a base and to obtain a minute bipolar transistor by stable processes, by separating the emitter and the base by a fine patterning of an added insulating film, extracting the polysilicon in a base contact window, and using it as a base extracting electrode. CONSTITUTION:An added insulating film 12' is replenished on the entire surface including the surface of a region, in which a bipolar transistor surrounded by a field insulating film 12 is to be formed. Contact windows 15, 16, and 35 are formed in the parts, where the electrodes for an emitter, a base, and a collector are to be formed, by a highly accurate patterning technology. The window 16 is formed so as to cover tha surrounding insulating film 12 by removing the field insulating part. Then, the windows are buried by polysilicon 18, 19, and 36, and a flat surface structure is obtained. Thereafter, a protecting insulating film 23 is formed on the entire surface once. Holes are provided on the emitter contact window 15 and the collector contact window 35 at the parts, where the emitter and the collector are to be formed. Metal electrodes 26 and 37 for the emitter and the collector are connected. A hole is provided on the field insulating part of a polysilicon 19 of the window 16, and a metal electrode 27 for the base is connected to a part 19'. |
