| 摘要 |
PURPOSE:To attain anisotropic etching with excellent reproducibility, and to obtain a sufficient etching rate by introducing a mixed gas of boron trichloride gas and chlorine gas and etching a compound semiconductor crystal containing Al as a constituent by plasma generated by the application of high-frequency power. CONSTITUTION:A photo-resist mask 34 is formed on an electrode 32 so that a mesa region and one region of a buried layer 30 are coated with the mask and the end of the mask is made perpendicular to a mesa stripe. The electrode 32 is etched by reactive ion etching by a reactive gas mainly comprising Cl2 while using the photo-resist 34 as a mask, and a GaAlAs laminate and the buried layer 30 are etched to a GaAs substrate 21 by using a mixed gas of BCl3 gas and Cl2 gas. The end surface of a resonator is formed because of anisotropic etching under the conditions at that time, thus forming a plurality of buried type semiconductor lasers on one substrate in a monolithic manner.
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