发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To improve the operation stability by using flat magnetic bubbles in accordance with high integration and high density and reducing the thickness of a spacer layer, the quantity of ion implantation to an ion implantation layer, and the thickness of a magnetic bubble transfer path layer. CONSTITUTION:In a minor loop part, a magnetic bubble transfer layer 14 whose thickness d2 is 500-3,000Angstrom is formed on an ion implantation layer 12. The ion implantation layer 12 is formed with 1X10<12>-1X10<14>ions/cm<2> with respect to the quality of ion implantation. A diameter (d) and a height (h) of magnetic bubbles using a magnetic film 11 are set to satisfy h<=0/8d, and flat magnetic bubbles B' are obtained. By this constitution, interaction between the magnetic bubble transfer path layer 14 and magnetic bubbles B' is strengthened, and the operation stability is improved.
申请公布号 JPS60117477(A) 申请公布日期 1985.06.24
申请号 JP19830224104 申请日期 1983.11.30
申请人 HITACHI SEISAKUSHO KK;HITACHI MAIKURO COMPUTER ENGINEERING KK 发明人 HIROSHIMA MINORU;YANAI MASAHIRO;SEKINO MITSURU
分类号 G11C11/14 主分类号 G11C11/14
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