| 摘要 |
PURPOSE:To make it possible that a stripe magnetic domain and a bubble magnetic domain exist simultaneously on the same chip stably, by giving overdamage to an area of an information reading part of a garnet film by ion implantation, forming a nonmagnetic layer on said film. CONSTITUTION:Ions are implanted to an area A with a high dose to make a part A1 of the area A nonmagnetic by overdamage. As the result, a practical film thickness in the area A becomes hA and is thinner than a film thickness hB in an area B where ions are not implanted. By changing the film thickness in this manner, it is possible that a stripe magnetic domain 11 of an information storage part and a bubble magnetic domain 12 of an information reading part which are required for a Bloch line memory exist simultaneously and stably in a proper bias magnetic field. |
