| 摘要 |
<p>PURPOSE:To shorten a testing time of a memory device by comparing data read out of plural blocks. CONSTITUTION:FETs Q11-Q14 are turned on by impressing a signal of a high level to a test pad TP1, and an input data Din is written in cell blocks 1, 2, respectively, through amplifiers 3, 4. Subsequently, each data is read out, and the respective inversion data and non-inversion data are impressed to the gate of Q15, Q16, Q17 and Q18 through buffers 6, 7. In case output data of the buffer 6 and 7 do not coincide with each other, both potentials of a test pad TP2 and TP3 become a low level or a high level, and an error can be detected.</p> |
