ULTRA-FINE PATTERN FORMATION

摘要

PURPOSE:To form a ultra-fine pattern having a high film remaining coefficient and also shorten the processing time by irradiating a resist film with active line and processing it under a particular temperature. CONSTITUTION:After a silicon wafer is rotatingly coated with a photo resist coating liquid, the surface is dried in the hot driyer and remaining solvent in the coating film is eliminated by vaporization. The surface is then exposed by the far ultra-violet ray through a pattern mask using an ultra-violet ray exposure. Heat processing is carried out for 10min or less under the temperature ambient of 200-500 deg.C using a baking furnace. After such heat processing, a ultra-fine pattern can be obtained by processing with oxygen gas plasma using the plasma processing apparatus.