| 摘要 |
PURPOSE:To obtain electrode structure having an excellent ohmic contact and superior heat resistance by constituting electrode layers by the laminates of metallic silicide layers and metallic barrier layers when the electrode layers are formed to each region shaped to a semiconductor substrate and wiring layers are applied on the electrode layers. CONSTITUTION:An N<+> type buried layer 2 is diffused and formed to the surface layer section of a P type semiconductor substrate 1, an N<-> type layer 4 is grown on the whole surface containing the layer 2 in an epitaxial manner, and the layer 4 is isolated insularly including the region 2 by a thick oxide film 6 using a P<+> type region 3 as an underlay while the shallow oxide film 6 is also spahed on the side being in contact with one of the region 2. A P<+> type base region 8 is diffused and formed in the insularly shaped layer 4, an N type emitter region9 is formed in the region 8, and electrode layers are each formed on the surface of the region 9 and an N<+> type region 7 shaped to the layer 4 while being separated by the film 6. The electrode layers are constituted by the laminates of metallic silicide layers 11 of Pt, etc. and metallic barrier layers 12 consisting of W, etc. at that time, and Al wiring layers 13 are each applied on the electrode layers. |
