| 摘要 |
PURPOSE:To improve the controllability of film thickness, and to enhance the absolute precision of a capacitance value while reducing the resistance value of a lower electrode by forming an insulating film in two-layer constitution of an SiO2 film shaped through a rotary application method and an Si3N4 film through a CVD method in a semiconductor capacitance having two-layer structure constituted by the lower electrode consisting of a polycrystalline Si layer, etc. containing P, As, B, etc., the insulating film formed on the lower electrode and an upper electrode. CONSTITUTION:A thick field SiO2 film 12 for isolating element regions 11 and 11' is formed to the fringe section of a single crystal Si substrate 10, and a lower electrode 13 consisting of polycrystalline Si containing an impurity, such as P, As, B, etc. is shaped onto the central film 12 and gage electrodes 14 and 14' for an MOS transistor on the substrate 10 exposed between the films 12 respectively. An SiO2 film 25 having excellent film quality is applied on the whole surface of the substrate 10 through a rotary application method, an Si3N4 film is laminated on the film 25 through a CVD method, and an upper electrode 16 is formed on the Si3N4 film. |
