发明名称 |
Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures. |
摘要 |
<p>A new class of synthesized semiconducting multiple layer materials, structures, and devices and apparatus and methods for synthesizing the structures. At least one layer (138a) of the multiple layer structure (138) is a disordered semiconductor material. Multiple layer structures can form one or more regions of improved photoresponsive and photovoltaic single and tandem cells, thin film transistors and thermoelectric devices. The multiple layer structures provide a means of electronically doping semiconductor device structures without adding substitutional dopant impurities.</p> |
申请公布号 |
EP0145403(A2) |
申请公布日期 |
1985.06.19 |
申请号 |
EP19840308219 |
申请日期 |
1984.11.27 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
FRITZSCHE, HELLMUT;OVSHINSKY, STANFORD R.;ADLER, DAVID |
分类号 |
H01L31/042;C23C14/56;C23C16/44;H01L21/205;H01L29/15;H01L29/49;H01L29/786;H01L31/04;H01L31/20;(IPC1-7):H01L29/04;H01L31/18;H01L31/02 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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