Process for fabricating a soi type semiconductor device.

摘要

A process for fabricating a substrate having a dielectric isolated region, using energy beam recrystallization.

An island of poly-silicon is formed on an insulating/ isolating substrate (61). Over the surface of the polysilicon and the substrate a cap (63) containing a dopant is provided. A laser beam is irradiated through the cap (63), and the poly-silicon is recrystallized to form a first silicon single crystal layer (62a), and doped at the same time. A second single crystal layer (65) is grown over the first single crystal layer (62a). Crystal imperfections in a border area of the first single crystal layer (62a) may be avoided. The first single crystal layer (62a) is used as a buried layer, and the second single crystal layer (65) is used to fabricate a semiconductor device.