DRAWING OF BARS OF MONOCRYSTALLINE SILICON

摘要

High-purity silicon bars can be produced by electrically melting a portion of a mass of silicon granules in a crystal so that the mass around the melt isolates the melt from the crucible wall and thereby prevents contamination of the melt from the crucible and softening of the crucible wall by the melting heat. The current flow is promoted by the heating of the silicon granules and/or electrodes and a seed can be lowered into the melt so that a bar can be withdrawn therefrom for cutting up into wafers for use in the production of semiconductors.