| 摘要 |
<p>A semiconductor device comprising a field effect transistor, especially an insulated gate field effect transistor, which has in the direction from source zone to drain zone successive first and second channel zones with associated gate electrode parts. According to the invention, over at least 80% of the overall channel width, in a directon at right angles to the direction of source-drain current the ratiobetween the length L, of the first gate electrode part and the length L2 of the second gate electrode part is variable and smaller than unity in order to improve the linearity of the field effect transistor.</p> |
