| 摘要 |
PURPOSE:To manufacture a high-quality single crystal having less impurities and crystal defect by controlling the vapor pressure of a component element in a hermetic vessel to control the composition of a starting melt, and supervising a single crystal while being pulled up with X-ray irradiation. CONSTITUTION:A reservoir 9 for supplying a volatile component element (e.g., As) into a hermetic vessel 1 is provided, and the vapor pressure of the component element in the hermetic vessel 1 is controlled by controlling the temp. of the reservoir part with a heater 10. The deviation from the stoichiometrical composition of the starting melt 2 while being pulled up is prevented in this way. The part of the hermetic vessel 1 exposed to the vapor of the volatile component element is made of the element of the same group as the component element of a compd. to prevent the contamination from the vessel. In addition, the whole hot zone including the vessel 1 is constituted of a material having an X-ray absorption coefficient, 1/2 of the X-ray absorption coefficient of the pulled-up single crystal, and the thickness is regulated so that the X-ray transmission rate of the whole hot zone may be >=60% to supervise the single crystal while being pulled up by X-ray irradiation. |
