发明名称 GROWTH OF SINGLE CRYSTAL
摘要 PURPOSE:In growth of single crystal of ferrite, etc. by Bridgman method, to obtain single crystal having uniform composition in a short time, by melting previously a solid raw material in a crucible, putting a cover on it, setting the crucible in a furnace, growing single crystal. CONSTITUTION:A solid raw material is put in the crucible 2, the solid raw material is melted in a preliminary electric furnace previously prepared (not shown in the fig.), these operations are repeated several times, and the melted raw material is packed to the top of the crucible. The cover 3 is placed on the crucible 2, and it is set in the electric furnace 1 for growing single crystal. The raw material in the crucible 2 is remelted, the crucible 2 is transferred in the vertical arrow direction (relatively), the melted raw material is solidified from the bottom of the crucible 2, and made into single crystal successively.
申请公布号 JPS60108393(A) 申请公布日期 1985.06.13
申请号 JP19830212727 申请日期 1983.11.11
申请人 MATSUSHITA DENKI SANGYO KK 发明人 HOSHI TOSHIHARU;OKITA KAZUHIKO;SAJI HARUO
分类号 C30B29/22;C30B11/00 主分类号 C30B29/22
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