| 发明名称 |
METHOD OF MANUFACTURING AMORPHOUS SILICON FILMS |
| 摘要 |
In a method of forming a layer of an amorphous silicon compound by subjecting a gas containing a silane compound to glow discharge decomposition, the improvement wherein the substrate on which the amorphous silicon compound is to be deposited is positioned within 3 cm above or below the end of a positive column formed by said glow discharge. |
| 申请公布号 |
DE3170422(D1) |
申请公布日期 |
1985.06.13 |
| 申请号 |
DE19813170422 |
申请日期 |
1981.10.28 |
| 申请人 |
KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA |
发明人 |
HAMAKAWA, YOSHIHIRO;TAWADA, YOSHIHISA |
| 分类号 |
C23C16/24;C23C16/30;C23C16/50;G03G5/08;H01L21/205;H01L31/04;H01L31/20;(IPC1-7):C23C16/24;H01L27/14;C23C14/00;C01B33/02 |
主分类号 |
C23C16/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
