| 摘要 |
PURPOSE:To improve the withstand static voltage of clamping diodes without disturbing the improvement of the integration density by a method wherein the clamping diodes are arranged in parallel either on the input part or on the output part of a semiconductor device. CONSTITUTION:Clamping diodes 17 are arranged on the positions e.g. symmetrical with respect to SBD1 centered on an electrode 5 connected to a terminal 8 so that the withstand static voltage may be improved effectively without widening the width (W')15 of an element. The clamping diodes 17 are formed on a contact part between an n type semiconductor 2 and a high concentration p type semiconductor 18 composed of the n type semiconductor 2 with high concentration p type impurity diffused while the semiconductor 18 comes into ohmic contact with another electrode 16. On the other hand, the n type semiconduc- tor 2 is electrically connected to the electrode 5 connected to the terminal 8 at low resistance through the intermediary of a buried layer 4. Therefore, the clamping diodes 17 may be formed between the electrode 5 connected to the terminal 8 and the other electrode 16.
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