| 摘要 |
PURPOSE:To enable to arbitrarily control the vertical distance of a semiconductor element without complicating the diffusion process in the manufacturing method of the semiconductor element by a method wherein isolation diffusion layers and an anode diffusion layer are respectively formed at the same time as the same diffusion layer and the diffusion distance of the anode diffusion layer is further deepened. CONSTITUTION:An insulating oxide film 21 is selectively formed on the surface of an N type semiconductor substrate 11 by a photo etching process (PEP), for example. P type diffusion layers (insulating isolation layers) 22a and 22b are selectively formed on the surface of the N type semiconductor substrate 11 using impurities such as boron, etc., and at the same time as this, a P type anode diffusion layer 23 is totally formed on the back surface of the substrate 11 using the same impurities as the above-mentioned ones. A P type gate diffusion layer 25 is formed on the N type base region 24 of the semiconductor substrate 11, which is surrounded with the P type isolation diffusion layers 22a and 22b and the P type diffusion layer 23, and moreover, an N<+> type cathode diffusion layer 26 is formed on the surface of the P type diffusion layer 25. |
