| 摘要 |
PURPOSE:To prevent an Al wiring from shortcircuiting without projection from the edges thereof by a method wherein the first layer covering films is grown by a no-pressure chemical vapor growing and then the second layer covering film thicker than the first covering film is grown on the first covering film by a decompression chemical vapor growing device. CONSTITUTION:The first layer covering film 13 0.3mum thick is grown at the temperature of 425 deg.C on all Al wiring 12 further on a silicon substrate 11 by a normal pressure PSG growing device and firstly the second layer covering film 14 0.7mum thick is grown at the same temperature by a decompression PSG growing device and secondly an SiON film 15 0.5mum thick is grown to form another covering film at the same temperature. The reason why the first covering layer 13 is grown to the less thickness of 0.3mum by the normal pressure PSG growing device is to avoid leaving the Al wiring 12 at the temperature of 425 deg.C for a long time since it takes 5min and 30min respectively to preliminarily heat and to grow the PSG device for growing PSG 1.0mum thick. Through these procedures, the covering films with excellent moisture proof may be formed preventing the Al wiring from projection from the edge thereof. |
