| 摘要 |
PURPOSE:To ensure sufficient continuation even if a contact hole is miniaturized by forming contact electrode through formation of conductor pattern after selective growth of poly-silicon within a contact hole formed on an insulation layer on the silicon substrate. CONSTITUTION:A substrate 4 to which a contact hole 1 is opened is provided to an anode of sputter apparatus, the surface is sputtered in the Ar ambient and concentration of flying ion is kept at about 10<14>[psc/cm<2>]. Thereby, a strain can be given to the surface of diffusion layer 5 and a poly-Si is allowed to grow through selective growth under the reduced pressure. With such method, a contact hole 1 is filled with the poly-Si layer and then impurity ion such as P is diffused therein. Thereby, a resistance of poly-Si can be lowered and an Al conductor pattern 8 can be provided on the insulation layer 2 and can be connected to the poly-Si layer 7 of contact hole by forming the Al conductor pattern thereon. |
