Method of manufacturing semiconductor device

摘要

A method of manufacturing a semiconductor device comprises the steps of: forming a thin film on a semiconductor body on which a protruding pattern is formed with the film covering both the sides and the top of the protruding pattern; performing a selective anisotropic etching on the thin film for a distance corresponding to the thin film thickness, thereby removing a portion of the thin film including that portion covering the top of the protruding pattern and leaving a portion of the thin film covering the sides of the protruding pattern, thus forming a thin film pattern surrounding at least a portion of the protruding pattern; etching at least a top part of the protruding pattern while leaving the thin film pattern to extend upwardly from the surface of the semiconductor body; forming a conductive material film covering the semiconductor body including the thin film pattern; and dividing the conductive material film into portions by removing the thin film pattern.