GALLIUM ARSENIDE SUBSTRATE AND MANUFACTURE THEREOF

摘要

PURPOSE:To form a thermally stable large-sized GaAs substrate at low cost by applying and forming a GaAs layer on a large number of insular transition layer regions applied and shaped on an Si substrate. CONSTITUTION:A layer such as a Ge layer is applied and formed on the surface 1a of an Si substrate 1 as a transition layer 2. Grooves 3 are shaped to the transition layer 2 in a latticed form. The grooves 3 are dug so that the surface 1a of the substrate 1 is exposed. A GaAs layer 5 is applied and formed on the surface of the substrate 1 containing a large number of insular transition layer regions 4 shaped in this manner. Accordingly, a thermally stable large-sized GaAs substrate is obtained.