| 摘要 |
PURPOSE:To prevent a minute defect and the generation of warping and contrive to improve yield by determining the inter-lattice oxygen concentration included in a silicon crystal at a specific value. CONSTITUTION:By determining the inter-lattice oxygen concentration in a silicon crystal at 4.5X10<17>-12.0X10<17>atom/cm<3>, a silicon wafer which is difficult in generating a minute defect or a warp by thermal stress can be obtained, while the process can be stabilized and the yield can be improved. If the inter- lattice oxygen concentration in a silicon crystal is less than 4.5X10<17>atom/cm<3>, the crystal is too clean and a surface lamination defect is apt to be generated due to the effect of contamination by a very small amount of metal ion impurity. On the other hand, if the interstitial oxygen concentration is more than 12.0X10<17>atom/cm<3>, a minute defect is apt to be formed during heat treatment and a positioning due to thermal stress is apt to be generated. |
