METHOD OF PRODUCING PATTERN OF CONDUCTIVE MATERIAL

摘要

A method of providing narrow conductor tracks of metal silicide is provided. According to this technique, a pattern of polycrystalline silicon covered by a protective layer is converted along the edges into the silicide by covering the device with a metal. The edges are then silicidized laterally over a distance of 20 to 500 nm. The remaining silicon is selectively removed, and the tracks obtained can serve as conductor masks, such as, for example, a plate of a capacitor.