| 摘要 |
<p>PURPOSE:To obtain a mask for X-ray exposing which is free from the defect to be resulted from correction of a desired pattern by fixing an X-ray transmission film which allows transmission of soft X-rays and UV light to a base and forming the desired pattern on said film by using a photosensitive resin then plating an X-ray absorptive layer thereon. CONSTITUTION:A polyethylene terephthalate film 102 is fixed to a supporting structure 101 by means of fixing and protecting jigs 103. After a photosensitive resin film 104 is formed on the film 102, the film is exposed with UV rays and is developed to form a desired patterns, then a light shielding material 201 consisting of Cr, etc. is deposited by evaporation thereon. A light shielding film 301 is formed by a lift-off method. The pattern is corrected by the conventional method for inspecting an optical mask, etc. to obtain the perfect pattern at the point of this time. A resist film 401 is again formed over the entire surface of the film 102 and after UV light is irradiated thereto as shown by arrows from the film 102 side, the resist is developed to form a resist pattern 501. An X-ray absorptive material 601 such as Au is then deposited by evaporation thereon. The pattern 501 and the material 601 thereon are removed by a lift-off method, by which a perfect X-ray absorptive pattern 701 is formed.</p> |
