发明名称 AL WIRE FOR BONDING SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain an Al small-gage wire having excellent joining characteristics by the addition of small amounts of two kinds of selected elements by the synergism of the addition by adding the elements to Al having high purity. CONSTITUTION:0.0015-0.005wt% Si and 0.0015-0.005wt% Mg are added to Al having not less than 99.9% purity, and both contents are kept within a range of 0.003-0.008wt%. When the Al alloy is melted and casted, wire-drawn to form an Al wire having 0.1-0.5mm.phi diameter and thermally treated (350 deg.C and 30min), the Al wire obtained simultaneously has tensile strength and hardness proper to joining.
申请公布号 JPS6095947(A) 申请公布日期 1985.05.29
申请号 JP19830203872 申请日期 1983.10.31
申请人 TANAKA DENSHI KOGYO KK 发明人 FUKUI YASUO
分类号 H01L21/60;H01L23/49 主分类号 H01L21/60
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