发明名称 SEMICONDUCTOR CHIP
摘要 <p>PURPOSE:To avoid the application of large stress even under solder-mounting to a lead frame by a method wherein a metallic film for solder mounting is formed to a part of the back. CONSTITUTION:The Au-deposited film for solder mounting is formed not over the whole back of the titled chip 10, but to part of its back. For example, an Ni film 2 is formed by Ni evaporation after the back of an Si substrate 1 is lapped, and a vanadium film 3 is formed by vanadium evaporation. Further, an Au film 4 is formed by Au evaporation. A resist film 5 is applied on this Au film, the resist film 5 formed into a required pattern by photoetching that resist film 5 into the illustrated pattern being made as a mask, and the Au, Vd, and Ni being then plasmaetched. Finally, the resist film is exfoliated, and the Au-deposited film is formed in a pattern of the vertical and transverse arrangement of rectangular form members 11.</p>
申请公布号 JPS6094733(A) 申请公布日期 1985.05.27
申请号 JP19830202253 申请日期 1983.10.28
申请人 TOSHIBA KK 发明人 HOKEZU EIZOU
分类号 H01L21/52;H01L21/02;H01L21/58 主分类号 H01L21/52
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