| 摘要 |
PURPOSE:To form a substrate member into a thin type by a method wherein the substrate member in a sandwich structure, wherein a high-concentration impurity-containing Si layer is held between an Si substrate and an Si base layer, is provided and after a compound semiconductor device is formed on the substrate member, the Si substrate is removed. CONSTITUTION:An Si layer 11 containing an Sb-containing high-concentration impurity is formed on an Si single crystal substrate 17 by performing a thermal diffusion treatment. Then, a base layer 12 consisting of an Si single crystal is made to epitaxially grow. Successively, a Ge layer 13 consisting of a Ge single crystal is formed by an electron beam evaporation method. Then, a GaAs layer 14 having a P-N junction is made to epitaxially grow using an organic metal thermal decomposition method. Moreover, a covering glass layer 16 is bonded, an etching is performed on the Si substrate 17 from the side of the back surface of the Si layer 11 and the Si substrate 17 is completely removed. |
