| 摘要 |
PURPOSE:To accomplish a CIGF constitution using only one laminated body by a method wherein, in the laminated type complementary insulated gate type semiconductor device (CIGF) of channel type, one conductive electrode of the laminated body is used common. CONSTITUTION:The first conductive film 2, the first non-single crystal semiconductors 3 and 3' of P and N types, the second semiconductor or insulating body 4, the third semiconductors 5 and 5' of P type and N type, the second conductor 6, and a silicon oxide film 7 are formed on a substrate 1, and laminated bodies 50 and 50' are formed by performing a selective etching. The fourth non-single crystal semiconductor 35 constituting a channel forming region is laminated covering blocks 10 and 10', and a silicon nitride film 34 is formed. The second conductive film 30 is formed, an anisotropic etching is performed, and the residues located on the side circumference of the laminated bodies 50 and 50' are used as gate electrodes 40-43. The block 10' constitutes an inverter, and the block 10 constitutes, a switch. In the block 10', gates 40 and 41 are formed in common, and they are connected to an input 61 by passing along the side circumference of the laminated body 50'. |
