| 摘要 |
PURPOSE:To avoid heat generation of an operating semiconductor device by a method wherein a material with heat conductivity higher than that of an amorphous insulating film is selectively buried in this insulating film between a substrate and an island type semiconductor region under a part of the lower surface of the island type semiconductor region. CONSTITUTION:An insulating film 4 made of SiO2 or Si3N4 etc. is formed on an Si substrate or an amorphous insulating film 1. Next Mo, W, etc. or compound thereof 6 with specific pattern is selectively formed in another insulating film 5 under a separated island type region 3 to be formed in an amorphous insulating film 2. Through these procedures, a structure wherein a separated island type region 3 is provided through the intermediary of the insulator 2 on the layer 5 wherein a metal-pattern with high heat conductivity and high melting point is formed may be formed. |
