| 摘要 |
PURPOSE:To enable growing layers of P type and N type consecutively by heating to make P type after epitaxially growing an Hg.Cd.Te layer on a Cd.Te substrate and then making N type after epitaxial growth again. CONSTITUTION:The first epitaxial layer 6 of composition ratio Hg1-xCdxTe is grown on a P type Cd.Te substrate 3 by closed pipe chipping liquid phase epitaxial growth. Here, the substrate 3 has been made P type by adding an impurity ion such as P. When the temperature of the substrate 3 is raised in a state of removing the solution from the substrate 3, element P is diffused into the layer 6 and the layer 6 is made P type. Then, the temperature is lowered to the original point in the same state and the substrate 3 is again dipped with the solution for liquid phase epitaxial growth and the second epitaxial layer 7 is formed on the layer 6. The substrate 3 is then taken out of an epitaxial growth equipment and kept in the atmosphere of Hg to become an N type semiconductor. This method enables to make an epitaxial layer of different conduction type in the same equipment. |
