发明名称 |
MANUFACTURE OF NIOBIUM NITRIDE FILM |
摘要 |
PURPOSE:To obtain simply a stable niobium nitride film with high crystallizability by vapor-depositing niobium nitride on a substrate by ion beam sputtering in a nitrogen atmosphere using niobium or niobium nitride as a target. CONSTITUTION:A chamber 1 is evacuated to 10<-5>-10<-4>Torr, and gaseous Ar is introduced into an ion gun 2. Ar ion beams from the gun 2 are converted into neutral beams with a neutralizer 4, and the neutral beams hit a round target 5 of niobium or niobium nitride. Gas contg. >=25% nitrogen is introduced into the chamber 1 to vapor-deposit niobium nitride on a substrate 6. |
申请公布号 |
JPS6089563(A) |
申请公布日期 |
1985.05.20 |
申请号 |
JP19830196366 |
申请日期 |
1983.10.20 |
申请人 |
MATSUSHITA DENKI SANGYO KK |
发明人 |
KITAHATA MAKOTO |
分类号 |
C23C14/00;C23C14/06;C23C14/46;C30B28/12;C30B29/38;H01L39/24 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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