发明名称 MANUFACTURE OF NIOBIUM NITRIDE FILM
摘要 PURPOSE:To obtain simply a stable niobium nitride film with high crystallizability by vapor-depositing niobium nitride on a substrate by ion beam sputtering in a nitrogen atmosphere using niobium or niobium nitride as a target. CONSTITUTION:A chamber 1 is evacuated to 10<-5>-10<-4>Torr, and gaseous Ar is introduced into an ion gun 2. Ar ion beams from the gun 2 are converted into neutral beams with a neutralizer 4, and the neutral beams hit a round target 5 of niobium or niobium nitride. Gas contg. >=25% nitrogen is introduced into the chamber 1 to vapor-deposit niobium nitride on a substrate 6.
申请公布号 JPS6089563(A) 申请公布日期 1985.05.20
申请号 JP19830196366 申请日期 1983.10.20
申请人 MATSUSHITA DENKI SANGYO KK 发明人 KITAHATA MAKOTO
分类号 C23C14/00;C23C14/06;C23C14/46;C30B28/12;C30B29/38;H01L39/24 主分类号 C23C14/00
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