| 摘要 |
PURPOSE:To improve the quality and film forming efficiency of an alloy film with a titled method for forming film by a sputtering method by providing discretely respective targets of Ta and Al. CONSTITUTION:Targets 1A, 1B of Ta, Al are fixed respectively to the central part of a sputtering device. A separate target power source which can vary input electric power to the targets is connected between both targets and the frame of the device. A substrate 3 is fixed to a rotating body 2 supported rotatably around the targets and the body 2 is connected to a motor. The targets 1A, 1B, the body 2 and the substrate 3 are housed into a sputtering chamber 4 shut off from the outdoor air and the chamber 4 is connected via a tube 5 to an evacuating system. If a Ta-Al-N film is formed by such method, the Ta and Al molecules mix more easily with each other than in the prior art and even if the film forming speed is increased, the film having the uniform compsn. is obtd. The film compsn. is varied freely by controlling the electric power to the respective targets regardless of the distance between the targets and the substrate. |
