发明名称
摘要 PURPOSE:To reduce the peeling time by jetting a high pressure peeling liquid with a nozzle when a mask plating is removed as unnecessary after it was given in the spot plating for the semiconductor device frames. CONSTITUTION:When the mask plating 2 is removed as unnecessary after it was applied to the surface and back of the frame for the semiconductor device in the spot plating 3 for an exposed face on one side thereof, the following procedure is used in stead of immersing the frame in a tank full of the peeling liquid. The peeling liquid 5 is jetting against the frame 1 with a pressure of 0.5-5kg/cm<2> from upper and lower nozzles 7 sandwiching thereof while it is being moved by means of frame- feeding rollers 6. The plating 2 can be forcibly removed in such a short period of time as 20-30sec. For the jetting of the liquid 5, a peeling liquid tank 4, a pump 8 and the like are used.
申请公布号 JPS6019665(B2) 申请公布日期 1985.05.17
申请号 JP19790134078 申请日期 1979.10.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIMODA HIROSHI
分类号 H01L23/50;H01L21/48 主分类号 H01L23/50
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