| 摘要 |
<p>PURPOSE:To minimize the yield and performance deterioration due to threshold value dispersion of individual memory cell in case of rewriting memory storage by means of providing each memory cell with multiple rewriting electrodes. CONSTITUTION:A part of floating gate FG and at least more than one control gate CG capacity-coupled therewith are laminated to be formed on a channel region between a source S and a drain D formed on a semiconductor substrate. Besides, rewriting electrodes EG different from a channel region are provided and said gate FG is opposing to this electrodes EG through the intermediary of an extremely thin insulating film through which tunnel current can flow. A memory cell of said constitution is provided with multiple electrodes EG. In such a constitution, the threshold value dispersion of individual memory cell in case of rewriting memory inputs may be minimized in the memory wherein multiple memory cells are laminated to be formed.</p> |
