| 摘要 |
<p>PURPOSE:To eliminate the possibility that a preset state changes by reconduction of a fused fuse by changing a part of the fuse into oxide so as to preset the state with varying a resistance value thereof. CONSTITUTION:On a main plane of a semiconductor substrate 1, a field oxide film 2 is formed by thermal oxidation and an interlayer insulating film 3 such as a PSG film is formed. On this interlayer insulating film 3, an Al layer is vapor- deposited and a fuse 4 having a narrow treatment part 4a in its center is formed at the same time as formation of a wiring. The fuse 4 is changed its treatment part 4a in the center of the fuse into alumina by putting the semiconductor substrate 1 in an oxide atmosphere and irradiating the treatment part 4a with laser of proper intensity for a proper time from an aperture 5a. When the treatment part 4 is changed into alumina, the resistance value increases extremely thereby varying a resistance value of the fuse 4 and setting the state.</p> |
