发明名称 |
VERFAHREN ZUR HERSTELLUNG EINER MASKE FUER DIE MUSTERERZEUGUNG IN LACKSCHICHTEN MITTELS ROENTGENSTRAHLLITHOGRAPHIE |
摘要 |
<p>A method of manufacturing a mask for producing patterns in lacquer layers by means of X-ray lithography comprising a diaphragm which is very transparent to the X-ray radiation, is stretched on a frame in a self-supporting manner and which is applied as a thin layer to a substrate in a manner such that it is subjected to tensile stress, while the substrate is then removed as far as a part constituting a frame for the then self-supporting diaphragm.</p> |
申请公布号 |
DE3339624(A1) |
申请公布日期 |
1985.05.09 |
申请号 |
DE19833339624 |
申请日期 |
1983.11.02 |
申请人 |
PHILIPS PATENTVERWALTUNG GMBH |
发明人 |
LUETHJE,HOLGER;BRUNS,ANGELIKA;HARMS,MARGRET;MATTHIESSEN,BERND |
分类号 |
G03F1/22;H01L21/027;(IPC1-7):G03F1/00;G03F7/26;C03C17/06;C08G73/10 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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