发明名称 SEMICONDUCTOR LASER WITH MONITORING OUTPUT
摘要 PURPOSE:To obtain a relatively large monitoring output by forming the second oblique surface opposed to the first oblique surface at the outside of a semiconductor wafer, thereby efficiently emitting a reflected light on the first oblique surface by reflecting to the end side. CONSTITUTION:When a current is injected from a positive electrode 10 to a negative electrode 12, the gain of an active layer 3 is increased, and a laser oscillation is started together with the feedback of a periodical structure 11. At this time, since the first oblique surface 24 is provided, a Fabry-Perot oscillation is sufficiently suppressed. The reflected light on the first surface 24 is reflected, as shown by a broken line, by the second oblique surface 25, emitted from the sectional surface 26, thereby becoming a monitoring output light 30. Since the reflection in the second surface 25 utilizes the reflection of the electrode 12, the effect is not altered even if the oblique surface 15 is not fusion-bonded to the heat sink.
申请公布号 JPS6081885(A) 申请公布日期 1985.05.09
申请号 JP19830189516 申请日期 1983.10.11
申请人 NIPPON DENKI KK 发明人 SEKI MASAFUMI
分类号 H01S5/00;H01S5/10;H01S5/12 主分类号 H01S5/00
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