| 摘要 |
PURPOSE:To enhance the reliability and to improve the integration of a MOS field effect transistor by increasing the length of a gate of a portion crossing a boundary between a field insulating film and a source and drain region longer than the length of the gate at the center, thereby eliminating the influence of a bent part formed at a gate electrode. CONSTITUTION:A gate electrode 12 is formed of a portion 12A having the same gate length as that at the center of the gate electrode, and a portion 12B having a gate length longer than that at the center, its one end is connected with a gate electrode lead 13 and at the other end is connected with a gate electrode jumping part 14. The gate length of the bent part 15 of the gate electrode in the boundary 6 between a source and drain region 4 and a field insulating film 3 is equal to or longer than the part 12A shorter in the gate length than the electrode 12. |
